Statistical analysis of characteristics variability in bulk MOSFETs at Cryogenic Temperature

Characteristics variability of bulk MOSFETs was measured at room temperature (RT) and low temperatures (LT) and compared. It is newly found that the DIBL variability increases at LT. It is also found that VTH deference between RT and LT (\Delta \boldsymbol{V}_{\mathbf{TH}}) follows the normal distri...

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Bibliographic Details
Published in2021 Silicon Nanoelectronics Workshop (SNW) pp. 1 - 2
Main Authors Mizutani, Tomoko, Takeuchi, Kiyoshi, Saraya, Takuya, Kobayashi, Masaharu, Hiramoto, Toshiro
Format Conference Proceeding
LanguageEnglish
Published JSAP 13.06.2021
Subjects
Conferences
Cryogenics
Gaussian distribution
MOSFET
Silicon
Statistical analysis
Temperature distribution
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Summary:Characteristics variability of bulk MOSFETs was measured at room temperature (RT) and low temperatures (LT) and compared. It is newly found that the DIBL variability increases at LT. It is also found that VTH deference between RT and LT (\Delta \boldsymbol{V}_{\mathbf{TH}}) follows the normal distribution. The reasons for these phenomena are discussed.
ISSN:2161-4644