Room temperature negative differential resistance with high peak-to-valley current ratio of CdF/sub 2//CaF/sub 2/ resonant tunneling diode on silicon

We have demonstrated room temperature negative differential resistance with a high peak-to-valley ratio of nearly 10/sup 6/ using CdF/sub 2//CaF/sub 2/ double barrier resonant tunneling diode (DBRTD) structures grown on a Si(111) substrate. Fluctuation of layer thickness is evaluated at /spl plusmn/...

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Published inConference Proceedings. 2001 International Conference on Indium Phosphide and Related Materials. 13th IPRM (Cat. No.01CH37198) pp. 244 - 247
Main Authors Watanabe, M., Sakamaki, N., Ishikawa, T.
Format Conference Proceeding
LanguageEnglish
Published IEEE 2001
Subjects
Bonding
Diodes
Energy barrier
Ionization
Molecular beam epitaxial growth
Quantum wells
Resonant tunneling devices
Substrates
Surface morphology
Temperature
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Summary:We have demonstrated room temperature negative differential resistance with a high peak-to-valley ratio of nearly 10/sup 6/ using CdF/sub 2//CaF/sub 2/ double barrier resonant tunneling diode (DBRTD) structures grown on a Si(111) substrate. Fluctuation of layer thickness is evaluated at /spl plusmn/lTL (tri-layer=0.31 nm) for each layer. The I-V curves are reasonably dependent on the layer thickness of the CdF/sub 2/ quantum-well.
ISBN:9780780367005
0780367006
ISSN:1092-8669
DOI:10.1109/ICIPRM.2001.929103