Reducing arsenic to germanium cross contamination with isotopically enriched SDS /sup 72/GeF/sub 4

• Published in: 2000 International Conference on Ion Implantation Technology Proceedings. Ion Implantation Technology - 2000 (Cat. No.00EX432) pp. 707 - 710
• Main Authors: Rendon, M.J., Locke, J., Brown, B., Kamenitsa, D.
• Format: Conference Proceeding
• Language: English
• Published: IEEE 2000
• Subjects: Amorphous materials; CMOS process; CMOS technology; Contamination; Germanium; Implants; Ion beams; Ion sources; Isotopes; Silicon
• ISBN: 9780780364622; 0780364627
• DOI: 10.1109/IIT.2000.924251

Pre-amorphization (PA) implants are becoming increasingly popular in CMOS processing as junction depths decrease. As an isoelectric species, germanium has demonstrated a capability for performing such implants into silicon. The gaseous vapor of liquid GeF/sub 4/ is a common source of germanium for ion beams. The isotope with the atomic mass 74 is usually chosen for implantation because of its high natural abundance. However, cross contamination issues exist with similar mass dopants such as arsenic. The use of isotopically enriched /sup 72/Ge to more than 50% abundance improves the available beam current and reduces potential cross contamination. The use of the isotopically enriched /sup 72/Ge safe delivery system (SDS) source has been evaluated in a high current implanter. The mass resolution of this high current implanter is demonstrated. The surface and energetic cross contamination levels using both natural abundance GeF/sub 4/ and a SDS GeF/sub 4/ enriched source are compared using SIMS. The effectiveness of a between species purge, when using different implants, to reduce the energetic arsenic contaminant is presented.