Proton-irradiation of Cu(In,Ga)Se/sub 2/ and CuInS/sub 2/ thin-film solar cells

• Published in: Conference Record of the Twenty-Eighth IEEE Photovoltaic Specialists Conference - 2000 (Cat. No.00CH37036) pp. 1038 - 1041
• Main Authors: Boden, A., Braunig, D., Klaer, J., Karg, F.H., Hosselbarth, B., La Roche, G.
• Format: Conference Proceeding
• Language: English
• Published: IEEE 2000
• Subjects: Costs; Degradation; Flexible structures; Orbits; Photovoltaic cells; Protons; Solar power generation; Thin film devices; Time of arrival estimation; Transistors
• ISBN: 9780780357723; 0780357728
• ISSN: 0160-8371
• DOI: 10.1109/PVSC.2000.916064

Data of proton irradiated solar cells of the CIS-types (CuInS/sub 2/ as well as Cu(In,Ga)Se/sub 2/) are presented demonstrating the excellent radiation hardness of these thin-film devices against space radiation. Cost and weight considerations and the possible flexible structure are among the interesting points to use these cells as solar generators especially in orbits across the inner Van-Allen-belt. The degradation of the fundamental electrical parameters (I/sub SC/, V/sub OC/, FF and /spl eta/) of these thin film solar cells is shown. The impact of different proton energies on the damage coefficient is correlated with the in-depth scattering processes of protons within the device. The maximum damage is produced when the rest position of the protons is within the vicinity of the absorber bulk region.