Growth of optical absorption of GGG:Mg/sup 2+/,Cr/sup 4+/ epitaxial films

Summary form only given. Oxide single crystals doped with Cr/sup 4+/ are well known as materials for tunable IR lasing and Q-switching. Their growth by the liquid phase (LPE) epitaxy method on substrates of the generating crystal allows to simplify the production and assembling of microlasers as wel...

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Bibliographic Details
Published inConference Digest. 2000 Conference on Lasers and Electro-Optics Europe (Cat. No.00TH8505) p. 1 pp.
Main Authors Syvorotka, I.M., Ubizskii, S.B., Melnyk, S.S., Matkovskii, A.O., Kopczyski, K., Mierczyk, Z.
Format Conference Proceeding
LanguageEnglish
Published IEEE 2000
Subjects
Assembly
Chromium
Crystalline materials
Crystals
Electromagnetic wave absorption
Epitaxial growth
Epitaxial layers
Optical materials
Production
Substrates
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Summary:Summary form only given. Oxide single crystals doped with Cr/sup 4+/ are well known as materials for tunable IR lasing and Q-switching. Their growth by the liquid phase (LPE) epitaxy method on substrates of the generating crystal allows to simplify the production and assembling of microlasers as well as results in reduction of their price. The work represents the first results on the growth and characterization of epitaxial layers of gadolinium gallium garnet (GGG) co-doped with Mg(2+) and Cr/sup 4+/.
ISBN:0780363191
9780780363199
DOI:10.1109/CLEOE.2000.910046