Ultra-high responsivity and photovoltaic effect based on vertical transport in multi-layer \alpha -In2Se3

• Published in: 2019 Device Research Conference (DRC) pp. 189 - 190
• Main Authors: Mech, Roop K., Mohta, Neha, Muralidharan, Rangarajan, Nath, Digbijov N.
• Format: Conference Proceeding
• Language: English
• Published: IEEE 01.06.2019
• ISBN: 9781728121116; 1728121116
• ISSN: 2640-6853
• DOI: 10.1109/DRC46940.2019.9046438

We report on the first demonstration of photodetector as well as the observation of photovoltaic effect based on vertical transport in multilayer \alpha -In 2 Se 3 . A metal/ \alpha -In2Se 3 /ITO vertical junction was used to achieve an ultra-high responsivity of 1000 A/W even at a low bias of 0.5 V with a clear band-edge corresponding to multilayer \alpha -In 2 Se 3 . Additionally, an asymmetric barrier height arising out of ITO and Au contacts to vertical \alpha -In 2 Se 3 resulted in photovoltaic effect with \mathrm{V}_{\mathrm{OC}}\sim 0.1\mathrm{V} and \mathrm{I}_{\mathrm{S}\mathrm{C}}\sim 0.4\mu \mathrm{A} under 520 nm illumination.