A 30.1 mW / \mu m2 SiGe:C HBT Featuring an Implanted Collector in a 55-nm CMOS Node

This letter deals with the load-pull measurements at 94 GHz of 450 GHz Si/SiGe f T HBTs. On the one hand the technological modifications performed to improve large signal performances are presented and on the other hand, load-pull measurements are presented after having describing the measurement se...

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Bibliographic Details
Published inIEEE electron device letters Vol. 41; no. 1; pp. 12 - 14
Main Authors Gauthier, A., Aouimeur, W., Okada, E., Guitard, N., Chevalier, P., Gaquiere, C.
Format Journal Article
LanguageEnglish
Published IEEE 01.01.2020
Subjects
BiCMOS integrated circuits
Density measurement
Diffusion tensor imaging
Heterojunction bipolar transistors
implanted collector
Layout
Load-pull
Performance evaluation
SiGe HBT
Silicon germanium
W-band
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Summary:This letter deals with the load-pull measurements at 94 GHz of 450 GHz Si/SiGe f T HBTs. On the one hand the technological modifications performed to improve large signal performances are presented and on the other hand, load-pull measurements are presented after having describing the measurement setup. A state-of-the-art 30.1 mW/μm 2 Si/SiGe HBT is demonstrated thanks to a layout optimization.
ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2019.2954600