Active Enhancement in the kt2·Q of Two-Port AlN Resonators for Low-Loss Filtering

An active method to boost the figure-of-merit (FoM, defined as the product of quality factor, Q, and electromechanical coupling coefficient, ki 2 ) of a 54.7 MHz 4-terminal aluminum nitride (AlN) MEMS contour-mode resonator (CMR) from \sim 10 to >2,000 is presented. This significant improvement i...

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Bibliographic Details
Published in2019 Joint Conference of the IEEE International Frequency Control Symposium and European Frequency and Time Forum (EFTF/IFC) pp. 1 - 3
Main Authors Xu, Changting, Kochhar, Abhay, Piazza, Gianluca
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.04.2019
Subjects
active boost
Aluminum nitride
Damping
electromechanical coupling coefficient
Figure of merit
Force
III-V semiconductor materials
Micromechanical devices
quality factor
Resonant frequency
Resonators
two-port resonator
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Summary:An active method to boost the figure-of-merit (FoM, defined as the product of quality factor, Q, and electromechanical coupling coefficient, ki 2 ) of a 54.7 MHz 4-terminal aluminum nitride (AlN) MEMS contour-mode resonator (CMR) from \sim 10 to >2,000 is presented. This significant improvement is accomplished by modulation of the resonator stiffness and damping through an externally applied force that has a frequency-dependent phase relationship with respect to the driving voltage source. Compared to other passive enhancement methods, this technique overcomes the fundamental limit of AlN CMRs using a finite amount of external power. Furthermore, this method intrinsically avoids self-oscillations. We validate the proposed technique by showcasing how the performance of AlN CMRs can be dramatically improved for filtering applications.
ISSN:2327-1949
DOI:10.1109/FCS.2019.8856000