Continuous wave operation of 1.3 /spl mu/m vertical cavity InGaAsN quantum well lasers

Vertical-cavity lasers emitting at 1.3 /spl mu/m are extremely attractive for high bandwidth fiber communications where it is advantageous to operate at the dispersion minimum of silica optical fiber. To date, VCSELs based on pseudomorphic GaAs materials have achieved lasing emission only slightly l...

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Published inConference Digest. 2000 IEEE 17th International Semiconductor Laser Conference. (Cat. No.00CH37092) pp. 7 - 8
Main Authors Fischer, A.J., Klem, J.F., Choquette, K.D., Blum, O., Allerman, A.A., Fritz, I.J., Kurtz, S.R., Breiland, W.G., Sieg, R., Geib, K.M., Scott, J.W., Naone, R.L.
Format Conference Proceeding
LanguageEnglish
Published IEEE 2000
Subjects
Apertures
Distributed Bragg reflectors
Gallium arsenide
Laboratories
Mirrors
Plasma temperature
Quantum well lasers
Stimulated emission
Threshold current
Vertical cavity surface emitting lasers
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Summary:Vertical-cavity lasers emitting at 1.3 /spl mu/m are extremely attractive for high bandwidth fiber communications where it is advantageous to operate at the dispersion minimum of silica optical fiber. To date, VCSELs based on pseudomorphic GaAs materials have achieved lasing emission only slightly longer than 1.3 /spl mu/m. We report the first 1.3 /spl mu/m selectively oxidized VCSELs using InGaAsN quantum wells which operate at continuous wave at and above room temperature.
ISBN:9780780362598
0780362594
DOI:10.1109/ISLC.2000.882262