Heteroepitaxial growth of InGaAs/InP/InAlAs/InP core-multishell nanowires on Si for a complementary tunnel FETs

Tunnel field-effect transistor (TFET) is promising millivolt switch for future logic applications. However, the steepness of the subthreshold slope (SS), that defines the power consumption, and low conductance are still challenges due to lack of moderate tunnel junction and the device design. And, c...

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Bibliographic Details
Published in2019 Compound Semiconductor Week (CSW) p. 1
Main Authors Tomioka, Katsuhiro, Yoshida, Akinobu, Gamo, Hironori
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.05.2019
Subjects
Compounds
Information science
Junctions
Nanowires
Silicon
TFETs
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Summary:Tunnel field-effect transistor (TFET) is promising millivolt switch for future logic applications. However, the steepness of the subthreshold slope (SS), that defines the power consumption, and low conductance are still challenges due to lack of moderate tunnel junction and the device design. And, complementary switching operation is serious problem for TFET logic application due to asymmetry junction in the TFETs. Here we propose a solution for these challenges by a heteroepitaxial growth of InGaAs-based core-multishell (CMS) nanowire (NW) on Si with surrounding-gate structure.
DOI:10.1109/ICIPRM.2019.8819290