Effect of N2 plasma treatment in Cu/SiO2 hybrid bonding using ultra-thin manganese film

We investigated the effects of N 2 plasma treatment on Mn-Mn bonding strength and the electrical properties of a Mn layer between SiO 2 layers. Si atoms introduced into the Mn layer by N 2 plasma play an important role in improving bonding strength. Moreover, we confirmed that the Mn layer treated w...

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Bibliographic Details
Published in2019 6th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D) p. 12
Main Authors Tsumura, Kazumichi, Uchida, Kengo, Nakamura, Kenro, Nagata, Takahiro, Higashi, Kazuyuki, Kojima, Akihiro, Shibata, Hideki
Format Conference Proceeding
LanguageEnglish
Published JSPS 191st Committee on Innovative Interface Bonding Technology 01.05.2019
Subjects
Atomic layer deposition
Bonding
Leakage currents
Manganese
Plasma properties
Silicon
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Summary:We investigated the effects of N 2 plasma treatment on Mn-Mn bonding strength and the electrical properties of a Mn layer between SiO 2 layers. Si atoms introduced into the Mn layer by N 2 plasma play an important role in improving bonding strength. Moreover, we confirmed that the Mn layer treated with N 2 plasma has the desired leakage property.
DOI:10.23919/LTB-3D.2019.8735349