Screening, band filling and band-gap renormalization in piezoelectric quantum well systems

Summary form only given. InGaAs/GaAs strained-layer quantum well structures grown on non-(001) oriented substrates are of fundamental interest for a variety of nonlinear optical elements. We have studied the low-temperature photoluminescence of InGaAs/GaAs (111)B single quantum well structures with...

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Published inSummaries of papers presented at the Conference on Lasers and Electro-Optics pp. 473 - 474
Main Authors Chen, X., Molloy, C.H., Cooper, C., Woolf, D.A., Westwood, D., Somerford, D.J., Blood, P.
Format Conference Proceeding
LanguageEnglish
Published IEEE 1996
Subjects
Electrons
Filling
Gallium arsenide
Laser modes
Oxidation
Photonic band gap
Radiative recombination
Raman scattering
Spontaneous emission
Vertical cavity surface emitting lasers
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Summary:Summary form only given. InGaAs/GaAs strained-layer quantum well structures grown on non-(001) oriented substrates are of fundamental interest for a variety of nonlinear optical elements. We have studied the low-temperature photoluminescence of InGaAs/GaAs (111)B single quantum well structures with 25% Indium mole fraction. The combination of band-gap narrowing and screening of the internal fields leads to complex-carrier-induced nonlinearities in this piezoelectric system.
ISBN:1557524432
9781557524430