Very low threshold current-complex-coupled laser diode using reduced duty rate InGaAs absorptive grating

Summary form only given. Compared to conventional index-coupled laser diodes, superior characteristics of complex-coupled (CC) distributed feedback (DFB) laser diodes have been studied both theoretically and experimentally. There are two types of CC laser diodes. One is the laser diode with a corrug...

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Published inSummaries of papers presented at the Conference on Lasers and Electro-Optics pp. 32 - 33
Main Authors Chongdae Park, Jeong Soo Kim, Dae Kon Oh, Hyung Mun Kim, Joo-Heon Ahn, Heung Ro Choo, Hongman Kim, Kwang Eui Pyun, Dong-Keun Kim, Byung-Teak Lee
Format Conference Proceeding
LanguageEnglish
Published IEEE 1996
Subjects
Absorption
Diode lasers
Distributed feedback devices
Etching
Gratings
Indium gallium arsenide
Optical design
Optical device fabrication
Optical feedback
Threshold current
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Summary:Summary form only given. Compared to conventional index-coupled laser diodes, superior characteristics of complex-coupled (CC) distributed feedback (DFB) laser diodes have been studied both theoretically and experimentally. There are two types of CC laser diodes. One is the laser diode with a corrugated active layer to give an injected carrier-dependent-coupling, the other is the loss-coupled (LC) laser diode with an absorption layer over or below an active layer to give a periodic change in net gain. For a LC laser diode, it was theoretically predicted that the excess absorption into the embedded absorption layer causes the threshold current to increase and the external efficiency to decrease. In order to improve the above characteristics of LC laser diode, we designed and fabricated a LC laser diode with an embedded 200-/spl Aring/-thick InGaAs absorption layer on n-InP. The first-order InGaAs absorptive grating with the duty rate of 18% was obtained by our new grating fabrication method using CH/sub 4//H/sub 2/ reactive ion etching (RIE). The multiple quantum well consisted of 10 periods of 60 /spl Aring/ InGaAs and 100 /spl Aring/ InGaAsP (/spl lambda/=1.24 /spl mu/m). The threshold current and the slope efficiency measured at the optical power of 5 mW are 5.5 mA (threshold current density=1.5 kA/cm/sup 2/) and 20% for each uncoated facet, respectively. The optical spectrum shows that there is very little stop band as evidence of the CC laser diode. This is the lowest threshold current,to our knowledge, compared to other similar types of long-wavelength LC laser diodes.
ISBN:1557524432
9781557524430