Diffusive Representation and Sliding Mode Control of Charge Trapping in Al 2O 3 MOS Capacitors

The objective of this paper is to introduce a modeling strategy to characterize the dynamics of the charge trapped in the dielectric of MOS capacitors, using diffusive representation. Experimental corroboration is presented with MOS capacitors made of Alumina in three different scenarios. First, the...

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Bibliographic Details
Published inIEEE transactions on industrial electronics (1982) Vol. 66; no. 11; pp. 8628 - 8637
Main Authors Bheesayagari, Chenna Reddy, Pons-Nin, Joan, Atienza, Maria Teresa, Dominguez-Pumar, Manuel
Format Journal Article
LanguageEnglish
Published IEEE 01.11.2019
Subjects
Aluminum oxide
Capacitors
Charge trapping control
Data models
diffusive representation (DR)
ionizing radiation
MOS capacitors
Predictive models
sliding control
Threshold voltage
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Summary:The objective of this paper is to introduce a modeling strategy to characterize the dynamics of the charge trapped in the dielectric of MOS capacitors, using diffusive representation. Experimental corroboration is presented with MOS capacitors made of Alumina in three different scenarios. First, the model predictions are compared with the trapped charge evolution due to arbitrary voltage excitations. Second, the predictions are compared with the measurements of a device in which a sigma-delta control of trapped charge is implemented. Finally, the time evolution when the device is simultaneously controlled and irradiated with X-rays is compared with the predictions. In all cases, a good matching between the models and the measurements is obtained.
ISSN:0278-0046
1557-9948
DOI:10.1109/TIE.2018.2890488