The performance limiting factors as RF MOSFETs scale down

The measured RF performance of 0.5, 0.25, and 0.18 /spl mu/m MOSFETs gradually saturates as scaling down occurs, which can be explained by the derived analytical equation and simulation. The source-drain overlap capacitance, C/sub gd/, and non-quasi-static effect are the main factors but scale much...

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Bibliographic Details
Published in2000 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium Digest of Papers (Cat. No.00CH37096) pp. 151 - 155
Main Authors Wu, Y.H., Chin, A., Liang, C.S., Wu, C.C.
Format Conference Proceeding
LanguageEnglish
Published IEEE 2000
Subjects
Analytical models
Equations
Equivalent circuits
Frequency measurement
Frequency response
Integrated circuit measurements
MOSFETs
Performance analysis
Probes
Radio frequency
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Summary:The measured RF performance of 0.5, 0.25, and 0.18 /spl mu/m MOSFETs gradually saturates as scaling down occurs, which can be explained by the derived analytical equation and simulation. The source-drain overlap capacitance, C/sub gd/, and non-quasi-static effect are the main factors but scale much slower than L/sub g/.
ISBN:0780362802
9780780362802
ISSN:1529-2517
2375-0995
DOI:10.1109/RFIC.2000.854437