Magnetoresistance in La/sub 0.7/Sr/sub 0.3/MnO/sub 3-/spl delta// biepitaxial grain boundary junction

The observation of colossal magnetoresistance (CMR) in manganese oxide materials is being generated during the last few years not only for a scientific interests in these metallic oxides but also to apply the magnetic Sensor8 and magnetic recording devices[l]. In this study, we have made special 45...

Full description

Saved in:
Bibliographic Details
Published inIEEE International Magnetics Conference p. BT11
Main Authors Sang-Suk Lee, Do-Guwn Hwang, Geun-Young Ahn, Kab-Soo Kim, Hyan, H., Chang-Man Park, Mee-Yang Kim, Kyou-Lee Choi, Jang-Roh Rhee
Format Conference Proceeding
LanguageEnglish
Published IEEE 1999
Subjects
Annealing
Electrical resistance measurement
Magnetoresistance
Strontium
Transistors
Online AccessGet full text

Cover

More Information
Summary:The observation of colossal magnetoresistance (CMR) in manganese oxide materials is being generated during the last few years not only for a scientific interests in these metallic oxides but also to apply the magnetic Sensor8 and magnetic recording devices[l]. In this study, we have made special 45 angle grain boundary junction in the CMR layer using the biepitaxial La0.7Sr0.3MnO3-8(LSMO) thin film growing techniques, and investigated the magnetoresistance (MR) properties of LSMO grain boundary junction [2-4].
ISBN:0780355555
9780780355552
DOI:10.1109/INTMAG.1999.837381