An enhanced structure for multilevel magnetoresistive random access memory

MRAM (Magnetoresistive Random Access Memory) has many advantages over conventional RAM such as nonvolatily, non-destructive readout (NDRO), and simple manufacturing process based on Si technology[1]-[3]

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Bibliographic Details
Published inIEEE International Magnetics Conference p. BR13
Main Authors Won-Cheol Jeong, Byung-Il Lee, Seung-Ki Joo
Format Conference Proceeding
LanguageEnglish
Published IEEE 1999
Subjects
Enhanced magnetoresistance
Random access memory
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Summary:MRAM (Magnetoresistive Random Access Memory) has many advantages over conventional RAM such as nonvolatily, non-destructive readout (NDRO), and simple manufacturing process based on Si technology[1]-[3]
ISBN:0780355555
9780780355552
DOI:10.1109/INTMAG.1999.837352