Wide-bandgap-semiconductor wide-bandwidth wide-temperature-range power amplifiers

A wide-bandwidth and wide-temperature-range power amplifier has been demonstrated by using a GaN-AlGaN-on-SiC HEMT. With a fixed bias and without any load tuning, the amplifier exhibits useful and uniform performance across the band of 6 to 12 GHz and the temperature range of 78 to 400 K. These resu...

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Bibliographic Details
Published in1999 Asia Pacific Microwave Conference. APMC'99. Microwaves Enter the 21st Century. Conference Proceedings (Cat. No.99TH8473) Vol. 1; pp. 36 - 39 vol.1
Main Authors Hwang, J.C.M., Kehias, L.T., Cook, J.A., Calcatera, M.C., Sheppard, S.T.
Format Conference Proceeding
LanguageEnglish
Published IEEE 1999
Subjects
Bonding
Breakdown voltage
Broadband amplifiers
Capacitance
Frequency
Gallium nitride
HEMTs
Impedance matching
MODFETs
Optical reflection
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Summary:A wide-bandwidth and wide-temperature-range power amplifier has been demonstrated by using a GaN-AlGaN-on-SiC HEMT. With a fixed bias and without any load tuning, the amplifier exhibits useful and uniform performance across the band of 6 to 12 GHz and the temperature range of 78 to 400 K. These results demonstrate the potential of wide-bandgap semiconductors for robust power amplification. The potential for high-power, narrow-bandwidth, and regulated-temperature applications are also discussed.
ISBN:0780357612
9780780357617
DOI:10.1109/APMC.1999.828042