Evaluation of plasma doping for sub-0.18 /spl mu/m devices

The current drive to develop 0.13 /spl mu/m and smaller devices requires the development of alternate doping technologies, like plasma doping (PLAD) and Ultra-Low Energy (ULE) beamline ion implantation. This paper evaluates PLAD capabilities for 0.18 to 0.13 /spl mu/m devices. Multiple process param...

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Bibliographic Details
Published in1998 International Conference on Ion Implantation Technology. Proceedings (Cat. No.98EX144) Vol. 2; pp. 1222 - 1225 vol.2
Main Authors Lenoble, D., Goeckner, M.J., Felch, S.B., Fang, Z., Galvier, J., Grouillet, A.
Format Conference Proceeding
LanguageEnglish
Published IEEE 1998
Subjects
Annealing
Doping
Implants
Plasma applications
Plasma chemistry
Plasma devices
Plasma immersion ion implantation
Plasma properties
Plasma stability
Telecommunications
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Summary:The current drive to develop 0.13 /spl mu/m and smaller devices requires the development of alternate doping technologies, like plasma doping (PLAD) and Ultra-Low Energy (ULE) beamline ion implantation. This paper evaluates PLAD capabilities for 0.18 to 0.13 /spl mu/m devices. Multiple process parameters and the resulting implant characteristics are examined. To determine Si and SiO/sub 2/ stability during PLAD, substrates including bare Si wafers, wafers with SiO/sub 2/ cap layers and photoresist patterned wafers are implanted. Anneals range from as-implanted to 950-1050/spl deg/C for 10-30 s with various ambients. Implant profiles obtained by plasma doping are compared to those obtained with a low-energy beamline implanter (Varian SHC-80). A 490-/spl Aring/ junction depth with a sheet resistance /spl sim/400 /spl Omega///spl square/ is achieved.
ISBN:9780780345386
078034538X
DOI:10.1109/IIT.1998.813907