Contact reactions and silicide formation in implanted channels under high current density

• Published in: 1998 International Conference on Ion Implantation Technology. Proceedings (Cat. No.98EX144) Vol. 2; pp. 837 - 840 vol.2
• Main Authors: Chen, L.J., Chen, K.N., Lin, H.H., Cheng, S.L., Peng, Y.C., Shen, G.H., Chen, C.R.
• Format: Conference Proceeding
• Language: English
• Published: IEEE 1998
• Subjects: Contacts; Current density; Electron emission; Lithography; Morphology; Nickel; Optical microscopy; Scanning electron microscopy; Silicides; Transmission electron microscopy
• ISBN: 9780780345386; 078034538X
• DOI: 10.1109/IIT.1998.813798

Electrical behaviors of the nickel contacts on p/sup +/ and n/sup +/ channels under high current density were investigated. A silicide line was found to form in the p/sup +/-Si channel initiated from the cathode contact. On the other hand, no silicide line formation in the n/sup +/-Si channel was observed. Network structures were observed in both Co and Ni samples. The depth of silicide formation was found to extend to the junction depth. The silicide lines were only observed in Ni and Cu/p/sup +/-Si samples, but not in Ti and Co samples. The diffusivities of metals at high temperature determine the line formation. A model of the silicide line formation is proposed. The relations between the silicide length and the contact size, the applied current and the method of the applied current are discussed. For Ni (or Co) contacts on p/sup +/-Si, the preferred failure at the negative contacts is attributed to the electron-hole recombination. For Ni (or Co) contacts on n/sup +/-Si, failure at the positive contacts is controlled by a wear-out mechanism due to electromigration-assisted Ni (or Co) diffusion away from the Si.