Auger recombination in type I GalnAsSb/GaSb lasers and its variation with wavelength in the 2-3 μm range

• Published in: 2017 Conference on Lasers and Electro-Optics Europe & European Quantum Electronics Conference (CLEO/Europe-EQEC) p. 1
• Main Authors: Eales, T., Marko, I. P., Ikyo, B. A., Adams, A. R., Vurgaftman, I., Arafin, S., Sprengel, S., Amann, M.-C, Meyer, J. R., Sweeney, S. J.
• Format: Conference Proceeding
• Language: English
• Published: IEEE 01.06.2017
• Subjects: High definition video
• DOI: 10.1109/CLEOE-EQEC.2017.8086348

Summary form only given. Semiconductor lasers operating in the 2-3 μm wavelength range are useful for a variety of applications including environmental monitoring, non-invasive medical diagnosis and industrial processing [1]. While type-I GalnAsSb/GaSb quantum well (QW) lasers have achieved room temperature operation up to 3.73 μm, they are limited by the effects of non-radiative Auger recombination, inter-valence band absorption and carrier leakage due to inadequate hole confinement, all of which induce sensitivity to temperature [2]. Here we report studies of the non-radiative recombination mechanisms in type-I GalnAsSb based lasers, in order to assist device optimisation [3-5].