AlAs/sub 0.56/Sb/sub 0.44//In/sub 0.53/Ga/sub 0.47/As doped multi-channel field effect transistors

Summary form only given. Microwave and millimeter wave amplifiers for wireless and space applications need semiconductor devices with high current density and wide gain linearity. Heterostructure-based doped channel field effect transistors (DCFETs) are very promising devices for such applications....

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Published in1999 57th Annual Device Research Conference Digest (Cat. No.99TH8393) pp. 152 - 153
Main Authors Dumka, D.C., Cueva, G., Adesida, I., Hier, H.S., Aina, O.A.
Format Conference Proceeding
LanguageEnglish
Published IEEE 1999
Subjects
Current density
FETs
Linearity
Microwave amplifiers
Microwave devices
Millimeter wave devices
Millimeter wave transistors
Molecular beam epitaxial growth
Semiconductor devices
Semiconductor optical amplifiers
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Summary:Summary form only given. Microwave and millimeter wave amplifiers for wireless and space applications need semiconductor devices with high current density and wide gain linearity. Heterostructure-based doped channel field effect transistors (DCFETs) are very promising devices for such applications. In this work, we have grown AlAs/sub 0.56/Sb/sub 0.44//In/sub 0.53/Ga/sub 0.47/As lattice-matched to InP with multiple doped channels using molecular beam epitaxy (MBE) and fabricated DCFETs with variable gate length (0.2 to 1.0 /spl mu/m) on the heterostructure. The multichannel structure is used to achieve a wide gain linearity as well as high current density. In this paper, we present our results of multi-channel DCFETs with variable gate lengths. To the best of our knowledge, these are the first reported results of DCFETs on the AlAsSb/InGaAs material system.
ISBN:0780351703
9780780351707
DOI:10.1109/DRC.1999.806353