104 and 134 GHz InGaP/InGaAs HBT oscillators

In this paper, the development of 104 and 134 GHz InGaP/InGaAs heterojunction bipolar transistor oscillators is reported. The 104 GHz oscillator exhibits an output power of -3.4 dBm with a phase noise of -95 dBc/Hz at 1 MHz offset. The 134 GHz oscillator exhibits an output power of -10.4 dBm with a...

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Published inGaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 21st Annual. Technical Digest 1999 (Cat. No.99CH36369) pp. 237 - 240
Main Authors Uchida, K., Aoki, I., Matsuura, H., Yakihara, T., Kobayashi, S., Oka, S., Fujita, T., Miura, A.
Format Conference Proceeding
LanguageEnglish
Published IEEE 1999
Subjects
Frequency
HEMTs
Heterojunction bipolar transistors
Indium gallium arsenide
Millimeter wave communication
Millimeter wave measurements
Millimeter wave technology
Oscillators
Phase noise
Power generation
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Summary:In this paper, the development of 104 and 134 GHz InGaP/InGaAs heterojunction bipolar transistor oscillators is reported. The 104 GHz oscillator exhibits an output power of -3.4 dBm with a phase noise of -95 dBc/Hz at 1 MHz offset. The 134 GHz oscillator exhibits an output power of -10.4 dBm with a phase noise of -72 dBc/Hz at 1 MHz offset. To our knowledge, the 134 GHz oscillator is the highest-frequency fundamental mode oscillator using bipolar device technology ever reported.
ISBN:0780355857
9780780355859
ISSN:1064-7775
2379-5638
DOI:10.1109/GAAS.1999.803766