A 0.24 /spl mu/m SiGe BiCMOS mixed-signal RF production technology featuring a 47 GHz f/sub t/ HBT and 0.18 /spl mu/m L/sub ett/ CMOS

A new base-after-gate integration scheme has been developed to integrate a 47 GHz f/sub t/, 65 GHz F/sub max/SiGe HBT process with a 0.24 /spl mu/m CMOS technology having 0.18 /spl mu/m L/sub eff/ and 5 nm gate oxide. We discuss the benefits and challenges of this integration scheme which decouples...

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Published inProceedings of the 1999 Bipolar/BiCMOS Circuits and Technology Meeting (Cat. No.99CH37024) pp. 117 - 120
Main Authors St. Onge, S.A., Harame, D.L., Dunn, J.S., Subbanna, S., Ahlgren, D.C., Freeman, G., Jagannathan, B., Jeng, J., Schonenberg, K., Stein, K., Groves, R., Coolbaugh, D., Feilchenfeld, N., Geiss, P., Gordon, M., Gray, P., Hershberger, D., Kilpatrick, S., Johnson, R., Joseph, A., Lanzerotti, L., Malinowski, J., Orner, B., Zierak, M.
Format Conference Proceeding
LanguageEnglish
Published IEEE 1999
Subjects
BiCMOS integrated circuits
CMOS process
CMOS technology
FETs
Germanium silicon alloys
Heterojunction bipolar transistors
Production
Radio frequency
Silicon germanium
Space technology
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Summary:A new base-after-gate integration scheme has been developed to integrate a 47 GHz f/sub t/, 65 GHz F/sub max/SiGe HBT process with a 0.24 /spl mu/m CMOS technology having 0.18 /spl mu/m L/sub eff/ and 5 nm gate oxide. We discuss the benefits and challenges of this integration scheme which decouples the HBT from the CMOS thermal cycles. We also describe the resulting 0.24 /spl mu/m SiGe BiCMOS technology, BiCMOS 6HP, which includes a 7 nm dual gate oxide option and full suite of passive components. The technology provides a high level of integration for mixed-signal RF applications.
ISBN:9780780357129
0780357124
ISSN:1088-5714
DOI:10.1109/BIPOL.1999.803539