A 1.2 V, 430 MHz, 4 dBm power amplifier and a 25 /spl mu/W front-end, using a standard digital CMOS process

Autonomous transceivers working in the ISM UHF bands should meet both requirements of a long battery lifetime and a small overall volume, thus implying a reduction in the receiving power consumption down to less than 1 mW. Ultimately, this goal will only be reached by using original topologies and l...

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Published inProceedings. 1999 International Symposium on Low Power Electronics and Design (Cat. No.99TH8477) pp. 233 - 237
Main Authors Melly, T., Porret, A.-S., Enz, C.C., Kayal, M., Vittoz, E.
Format Conference Proceeding
LanguageEnglish
Published IEEE 1999
Subjects
Batteries
CMOS process
Dynamic range
Energy consumption
Noise figure
Power amplifiers
Radio frequency
Threshold voltage
Topology
Transceivers
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Summary:Autonomous transceivers working in the ISM UHF bands should meet both requirements of a long battery lifetime and a small overall volume, thus implying a reduction in the receiving power consumption down to less than 1 mW. Ultimately, this goal will only be reached by using original topologies and lowering the supply voltage down to single battery cell operation. A RF front-end and a power-amplifier (PA) designed for the 433 MHz European ISM band are presented. Both RF building blocks have been integrated in a standard 0.5 /spl mu/m digital CMOS process with 0.65 V threshold voltages. The front-end includes an LNA and a downconverter mixer. It achieves a total double sideband (DSB) noise figure of 9 dB, with a dynamic range of 85 dB for a 60 kHz bandwidth, while dissipating only 250 /spl mu/W at 1.2 V supply voltage. The PA includes two fully integrated class A stages together with an output class C amplifier. It achieves a +4 dBm output power with a 15% overall efficiency under 1.2 V supply voltage.
ISBN:158113133X
9781581131338