Important properties of transient thermal impedance for MOS-gated power semiconductors

Important properties of transient thermal impedance (TTI) for MOS-gated power semiconductors are investigated on the basis of measurement results. An electrical method of transient thermal impedance measurement was used with different temperature sensitive electrical parameters (TSEPs). A wide varie...

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Bibliographic Details
Published inISIE '99. Proceedings of the IEEE International Symposium on Industrial Electronics (Cat. No.99TH8465) Vol. 2; pp. 574 - 578 vol.2
Main Authors Jakopovic, Z., Bencic, Z., Kolonic, F.
Format Conference Proceeding
LanguageEnglish
Published IEEE 1999
Subjects
Impedance measurement
Insulated gate bipolar transistors
MOSFET circuits
Performance evaluation
Power dissipation
Power measurement
Protection
Semiconductor device testing
Temperature sensors
Time measurement
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Summary:Important properties of transient thermal impedance (TTI) for MOS-gated power semiconductors are investigated on the basis of measurement results. An electrical method of transient thermal impedance measurement was used with different temperature sensitive electrical parameters (TSEPs). A wide variety of measurements on MOSFET and IGBT samples was performed, to be able to answer the questions about TTI existence conditions. Different types of temperature responses were used, as well as different power dissipation levels and conditions. Finally, a TEMPFET test, with simulation and measurement of overtemperature protection reaction time, shows that TTI of MOS-gated components, if properly measured, can be successfully used for simulative estimation of a semiconductor's operating temperature.
ISBN:0780356624
9780780356627
DOI:10.1109/ISIE.1999.798675