Growth of GaN by microwave plasma enhanced MOCVD

• Published in: 1998 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings (Cat. No.98EX140) pp. 209 - 214
• Main Authors: Sani, R.A., Barmawi, M., Arifin, P., Sugianto
• Format: Conference Proceeding
• Language: English
• Published: IEEE 1998
• Subjects: Applicators; Gallium nitride; MOCVD; Nitrogen; Plasma materials processing; Plasma measurements; Plasma properties; Plasma temperature; Plasma x-ray sources; Transistors

Thin films of GaN on SI-GaAs and SnO/sub 2/ substrates were successfully grown by Microwave Plasma enhanced MOCVD at substrate temperatures in the vicinity of 650/spl deg/C. These temperatures are substantially lower than the growth temperature of GaN using a conventional MOCVD, which is in excess o...