Growth of GaN by microwave plasma enhanced MOCVD

• Published in: 1998 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings (Cat. No.98EX140) pp. 209 - 214
• Main Authors: Sani, R.A., Barmawi, M., Arifin, P., Sugianto
• Format: Conference Proceeding
• Language: English
• Published: IEEE 1998
• Subjects: Applicators; Gallium nitride; MOCVD; Nitrogen; Plasma materials processing; Plasma measurements; Plasma properties; Plasma temperature; Plasma x-ray sources; Transistors
• ISBN: 9780780345133; 0780345134
• DOI: 10.1109/COMMAD.1998.791622

Thin films of GaN on SI-GaAs and SnO/sub 2/ substrates were successfully grown by Microwave Plasma enhanced MOCVD at substrate temperatures in the vicinity of 650/spl deg/C. These temperatures are substantially lower than the growth temperature of GaN using a conventional MOCVD, which is in excess of 1000/spl deg/C. Trimethylgallium and nitrogen were used as precursors. A plasma applicator was used to create the nitrogen plasma, which was delivered from the cavity to the place near the substrate hearer using a quartz tube. X-ray diffraction measurements were revealed that the grown layer is a hexagonal structure. A Hall-van der Pauw technique was employed to measure the electrical properties. As grown material, room temperature resistivity, mobility, and carrier concentration are 36 /spl Omega//spl middot/cm, 73 cm/sup 2//V/spl middot/s, and 4.6/spl times/10/sup 15/ cm/sup -3/ respectively. Photoluminescence measurements were performed using a He-Cd laser emitting at 325 nm at different the temperatures. Luminescence, centered at 2.9 eV were clearly observed. Meanwhile the UV absorption spectrum showed a band-gap of around 3.4 eV.