Realization and characterization of 8/spl times/8 resonant cavity LED arrays mounted onto CMOS drivers for POF-based interchip interconnections
An 8/spl times/8 array of resonant-cavity light emitting diodes (RCLED's) emitting at 980 nm and flip-chip mounted onto complimentary metal-oxide-semiconductor (CMOS) integrated drivers, is presented. The RCLED's are optimized for maximal extraction efficiency into the numerical aperture o...
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Published in | IEEE journal of selected topics in quantum electronics Vol. 5; no. 2; pp. 224 - 235 |
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Main Authors | , , , , , , , , , , , , , , |
Format | Journal Article |
Language | English |
Published |
IEEE
01.03.1999
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Subjects | |
Online Access | Get full text |
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Summary: | An 8/spl times/8 array of resonant-cavity light emitting diodes (RCLED's) emitting at 980 nm and flip-chip mounted onto complimentary metal-oxide-semiconductor (CMOS) integrated drivers, is presented. The RCLED's are optimized for maximal extraction efficiency into the numerical aperture of polymer optical fibers (NA=0.5) and minimal optical crosstalk. Design of the optimal cavity structure is presented, and 8/spl times/8 arrays are realized and mounted directly onto standard CMOS chips using a solder reflow technique. The CMOS integrated drivers are designed for high-speed operation and low-power consumption, and are realized in 0.8 and 0.6-/spl mu/m CMOS technology. The electrooptical modules have been realized and characterized, and over 50-/spl mu/W optical power coupled to POF at 3-mA drive current is reported. Open eye diagrams at operation speed up to 250 Mb/s are presented. These characteristics are compatible with CMOS integrated low-power receivers. |
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ISSN: | 1077-260X 1558-4542 |
DOI: | 10.1109/2944.778294 |