Realization and characterization of 8/spl times/8 resonant cavity LED arrays mounted onto CMOS drivers for POF-based interchip interconnections

• Published in: IEEE journal of selected topics in quantum electronics Vol. 5; no. 2; pp. 224 - 235
• Main Authors: Bockstaele, R., Coosemans, T., Sys, C., Vanwassenhove, L., Van Hove, A., Dhoedt, B., Moerman, I., Van Daele, P., Baets, R.G., Annen, R., Melchior, H., Hall, J., Heremans, P.L., Brunfaut, M., Van Campenhout, J.
• Format: Journal Article
• Language: English
• Published: IEEE 01.03.1999
• Subjects: Apertures; CMOS technology; High speed optical techniques; Light emitting diodes; Optical arrays; Optical crosstalk; Optical fibers; Optical polymers; Optical receivers; Resonance
• ISSN: 1077-260X; 1558-4542
• DOI: 10.1109/2944.778294

An 8/spl times/8 array of resonant-cavity light emitting diodes (RCLED's) emitting at 980 nm and flip-chip mounted onto complimentary metal-oxide-semiconductor (CMOS) integrated drivers, is presented. The RCLED's are optimized for maximal extraction efficiency into the numerical aperture of polymer optical fibers (NA=0.5) and minimal optical crosstalk. Design of the optimal cavity structure is presented, and 8/spl times/8 arrays are realized and mounted directly onto standard CMOS chips using a solder reflow technique. The CMOS integrated drivers are designed for high-speed operation and low-power consumption, and are realized in 0.8 and 0.6-/spl mu/m CMOS technology. The electrooptical modules have been realized and characterized, and over 50-/spl mu/W optical power coupled to POF at 3-mA drive current is reported. Open eye diagrams at operation speed up to 250 Mb/s are presented. These characteristics are compatible with CMOS integrated low-power receivers.