Novel FDSOI band-modulation device: Z2-FET with Dual Ground Planes

A novel sharp switching Z 2 -FET DGP device (Zero Impact Ionization and Zero Subthreshold Slope FET with Dual Ground Planes) relying on band modulation mechanism is presented in this paper. The device is fabricated in the most advanced FDSOI (Fully Depleted SOI) technology with Ultra-Thin Body and B...

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Published in2016 46th European Solid-State Device Research Conference (ESSDERC) pp. 210 - 213
Main Authors El Dirani, H., Fonteneau, P., Solaro, Y., Ferrari, P., Cristoloveanu, S.
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.09.2016
Subjects
1T-DRAM
Anodes
Dual Ground Planes
Electro-Static Discharge (ESD)
Electrostatic discharges
Fully Depleted SOI (FDSOI)
Global Positioning System
Hysteresis
Logic gates
Sharp Switch
Silicon-on-insulator
Switches
Ultra-Thin Body and BOX (UTBB)
Zero Impact Ionization and Zero Subthreshold Slope FET
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Summary:A novel sharp switching Z 2 -FET DGP device (Zero Impact Ionization and Zero Subthreshold Slope FET with Dual Ground Planes) relying on band modulation mechanism is presented in this paper. The device is fabricated in the most advanced FDSOI (Fully Depleted SOI) technology with Ultra-Thin Body and Buried Oxide (UTBB). The Z 2 -FET DGP is an upgraded version of Z 2 -FET. It features sharp on-switch, adjustable triggering voltage (Vt1), and wide hysteresis useful for 1T-DRAM memory.
ISSN:2378-6558
DOI:10.1109/ESSDERC.2016.7599623