Calculation of electric field of experimentally obtained nanoscale field emission structures

The electric field strength and gain have been calculated for a nanostructural field emission array (FEA), the structure and fabrication technology of which differed principally from the conventional Spindt FEA. The forming of regular nanoscale titanium tips incorporated into cylindrical nanochannel...

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Published inEleventh International Vacuum Microelectronics Conference. IVMC'98 (Cat. No.98TH8382) pp. 26 - 27
Main Authors Solntsev, V.A., Rodionov, V.N., Tatarenko, N.I.
Format Conference Proceeding
LanguageEnglish
Published IEEE 1998
Subjects
Anodes
Electrodes
Field emitter arrays
Microelectronics
Nanoscale devices
Nanostructures
Superconducting thin films
Thin film devices
Titanium
Voltage
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Summary:The electric field strength and gain have been calculated for a nanostructural field emission array (FEA), the structure and fabrication technology of which differed principally from the conventional Spindt FEA. The forming of regular nanoscale titanium tips incorporated into cylindrical nanochannels of a dielectric layer of a porous anodic alumina was possible due to the thin-film system self-organization at the nanolevel in the process of its electrochemical anodizing.
ISBN:9780780350960
0780350960
DOI:10.1109/IVMC.1998.728621