Efficacy of Ar in reducing the kink effect on floating-body NFD/SOI CMOS

Despite recent reports of high speed nonfully-depleted (NFD) silicon-on-insulator (SOI) CMOS processes (Assaderaghi et al. 1997), there are growing concerns about SOI scalability due to the off-state leakage current induced by parasitic bipolar effects (Chau et al. 1997). To reduce these, Ar implant...

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Bibliographic Details
Published in1998 IEEE International SOI Conference Proceedings (Cat No.98CH36199) pp. 155 - 156
Main Authors Chang, D., Veeraraghavan, S., Mendicino, M., Rashed, M., Connelly, D., Jallepalli, S., Candelaria, J.
Format Conference Proceeding
LanguageEnglish
Published IEEE 1998
Subjects
Argon
Boron
Current measurement
Degradation
Implants
Leakage current
MOS devices
Silicon
Temperature
Threshold voltage
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Summary:Despite recent reports of high speed nonfully-depleted (NFD) silicon-on-insulator (SOI) CMOS processes (Assaderaghi et al. 1997), there are growing concerns about SOI scalability due to the off-state leakage current induced by parasitic bipolar effects (Chau et al. 1997). To reduce these, Ar implantation into source/drain regions, creating recombination centers in the silicon, has been proposed (Ohno et al. 1995). In this work, the effects of Ar implantation on device performance at different temperatures and supply voltages are examined for deep submicron technologies.
ISBN:9780780345003
0780345002
ISSN:1078-621X
2577-2295
DOI:10.1109/SOI.1998.723158