L } = 80 -nm Trigate Quantum-Well In0.53Ga0.47As Metal-Oxide-Semiconductor Field-Effect Transistors With Al2O3/HfO2 Gate-Stack

• Published in: IEEE electron device letters Vol. 36; no. 3; pp. 223 - 225
• Main Authors: Tae-Woo Kim, Dong-Hyi Koh, Chan-Soo Shin, Won-Kyu Park, Orzali, Tommaso, Hobbs, Chris, Maszara, Witek P., Dae-Hyun Kim
• Format: Journal Article
• Language: English
• Published: IEEE 01.03.2015
• Subjects: Aluminum oxide; atomic-layer-deposition (ALD); drain-induced-barrier-lowering (DIBL); Hafnium compounds; Indium gallium arsenide; Logic gates; MOSFET; on-resistance (RON); subthreshold swing (S); Transconductance; transconductance (gm); Tri-gate In0.53Ga0.47As MOSFET; transconductance (g _{\mathrm{{m}}} ); atomiclayer-deposition (ALD); on-resistance (R _{\rm {ON}} ); subthreshold swing (S); drain-induced-barrier-lowering (DIBL); Tri-gate In0.53Ga0.47As MOSFET
• ISSN: 0741-3106; 1558-0563
• DOI: 10.1109/LED.2015.2393554

We report on L g = 80-nm trigate quantumwell InGaAs metal-oxide-semiconductor field-effect transistors (MOSFETs) with record combination of subthreshold swing, transconductance and ON-current performance. The device features a multilayer cap design, bilayer Al 2 O 3 /HfO 2 (0.7/2 nm) gate-stack by atomic layer deposition and dry etched In 0.53 Ga 0.47 As fin. An L g = 80-nm trigate MOSFET with fin-width (W fin ) = 30 nm and fin-height (H fin ) = 20 nm exhibits excellent performance, such as ON-resistance (RON) = 220 Ω-μm, subthreshold swing (S) = 82 mV/dec, and drain-induced-barrier lowering = 10 mV/V at V DS = 0.5 V. Besides, the device exhibits record values of maximum transconductance (g m_max ) = 1800 μS/μm and I ON = 0.41 mA/μm at V DS = 0.5 V, and a record combination of g m_max and S in any III-V nonplanar MOSFET technology.