Modelling and simulation of single and double gate thin film SOI MOSFETs

Summary form only given. Analytical models for thin-film SOI transistors controlled by one (conventional operation) or two gates (volume-inversion type) are proposed. They provide the electrical characteristics of the transistors in ohmic operation, in particular, the weak inversion slope and the th...

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Published inIEEE SOS/SOI Technology Conference pp. 25 - 26
Main Authors Balestra, F., Benachir, M., Brini, J., Sweid, I., Ghibaudo, G., Guillemot, N.
Format Conference Proceeding
LanguageEnglish
Published IEEE 1989
Subjects
Analytical models
Electric variables
Intersymbol interference
MOSFET circuits
Numerical simulation
Semiconductor films
Silicon
Thin film devices
Thin film transistors
Threshold voltage
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Summary:Summary form only given. Analytical models for thin-film SOI transistors controlled by one (conventional operation) or two gates (volume-inversion type) are proposed. They provide the electrical characteristics of the transistors in ohmic operation, in particular, the weak inversion slope and the threshold voltage. These models are based on the following approximations: for the single-gate operation (classical MOSFET) the potential varies linearly in the silicon film; for the double-gate operation (VI-MOSFET, for which both front and back gates are biased simultaneously), the potential is nearly constant. The numerical simulation (ISIS 1 program for SOI devices) is compared with these analytical modelings, and justifies these approximations for transistors fabricated on sufficiently thin film. OSIRIS II and ISIS II, a coupled process and device simulator are presented for SIMOX structures.< >
DOI:10.1109/SOI.1989.69748