Growth and luminescent properties of Lu3(Ga,In)5O12:Eu3+ epitaxial films

High quality thin epitaxial films of Lu 3 (Ga,In) 5 O 12 :Eu 3+ with high effective atomic number were grown by liquid phase epitaxy method. Excitation and emission spectra of Lu 3 (Ga,In) 5 O 12 :Eu 3+ epitaxial films were studied under UV and X-ray excitations. The photo- and X-ray luminescence sp...

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Bibliographic Details
Published inInternational Conference on Oxide Materials for Electronic Engineering - fabrication, properties and applications (OMEE-2014) pp. 151 - 152
Main Authors Luchechko, A., Syvorotka, I. I., Zakharko, Ya, Syvorotka, I. M.
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.05.2014
Subjects
Abstracts
Biomedical optical imaging
epitaxial films
Epitaxial growth
Eu 3+ ions
In) 5 O 12 garnet
LPE
Lu 3 (Ga
Luminescence
Optical films
Optical imaging
photo- and X-ray luminescence
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Summary:High quality thin epitaxial films of Lu 3 (Ga,In) 5 O 12 :Eu 3+ with high effective atomic number were grown by liquid phase epitaxy method. Excitation and emission spectra of Lu 3 (Ga,In) 5 O 12 :Eu 3+ epitaxial films were studied under UV and X-ray excitations. The photo- and X-ray luminescence spectra of Eu 3+ ions in Lu 3 (Ga,In) 5 O 12 :Eu 3+ are characteristic to the f→f transition in the Eu 3+ ions that occupied dodecahedral sites in the garnet structure. The ratio of the bands intensities in luminescence spectra under different types of excitation was determined.
ISBN:147995960X
9781479959600
DOI:10.1109/OMEE.2014.6912384