10 Bit and 12 Bit data conversion achievements at microwave frequencies on 200GHz SiGeC (Bipolar) and 120GHz 0.18µm BiCMOS technology

• Published in: 2013 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM) pp. 53 - 60
• Main Authors: Wingender, Marc, Bore, Francois, Chantier, Nicolas, Glascott-Jones, Andrew, Bouin, Etienne, Amblard, Jean-Philippe
• Format: Conference Proceeding
• Language: English
• Published: IEEE 01.09.2013
• Subjects: 12 Bit Broadband Data converters; BiCMOS integrated circuits; Calibration; Calibration Issues; Clocks; CMOS integrated circuits; High IF digitizing and synthesing; Multi-Nyquist operation; Noise; Noise and matching issues; Resistors; SiGe/SiGeC BiCMOS process; SiGeC fully Bipolar process; Single Core ADC and DAC Architecture; Spectral purity Noise Power Ratio (NPR); Time interleaved Architectures; Transistor cutoff frequency; Transistors
• ISBN: 9781479901265; 1479901261
• ISSN: 1088-9299; 2378-590X
• DOI: 10.1109/BCTM.2013.6798143

This paper describes design techniques for Bipolar and BiCMOS analog circuits. Comparison on such performances as transconductance, speed, matching, noise of bipolar and CMOS transistors are reviewed and compared. Design achievements such as a single core 12 Bit 1.5GS/s Analog to Digital Converter (ADC) [1] and a single core 12 Bit 3GS/s Digital to Analog Converters (DAC) [2] based on a fully bipolar 200GHz SiGeC technology are introduced to illustrate the advantages and drawbacks of a fully bipolar technology for high speed data converters. A Quad 10 Bit 5GS/s ADC based on 4 interleaved ADC Core designed with a 120 GHz 0.18um BiCMOS technology is also presented, to illustrate the advantages brought by the combination of Bipolar and CMOS technologies.