A vertical high voltage termination structure for high-resistivity silicon detectors

A new high voltage diode termination structure has been developed for the backside junction of silicon detectors which require double-sided processing. The new structure consists of a deep vertical etch through the diode at the edge of the detector. It requires only one mask, and is extremely robust...

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Bibliographic Details
Published in1997 IEEE Nuclear Science Symposium Conference Record Vol. 1; pp. 299 - 303 vol.1
Main Authors Segal, J.D., Kenney, C.J., Aw, C.H., Parker, S.I., Vilkelis, G., Iwanczyk, J.S., Patt, B.E., Plummer, J.
Format Conference Proceeding
LanguageEnglish
Published IEEE 1997
Subjects
Detectors
Etching
Face detection
Integrated circuit technology
Medical simulation
Robustness
Semiconductor diodes
Semiconductor materials
Silicon
Voltage
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Summary:A new high voltage diode termination structure has been developed for the backside junction of silicon detectors which require double-sided processing. The new structure consists of a deep vertical etch through the diode at the edge of the detector. It requires only one mask, and is extremely robust to scratches or other mechanical damage. The vertical termination has been successfully applied to an integrated pixel detector, where it increased yield. It has also been applied to an 8 mm diameter cylindrical drift detector.
ISBN:0780342585
9780780342583
ISSN:1082-3654
2577-0829
DOI:10.1109/NSSMIC.1997.672589