A robust Ku-band low noise amplifier using an industrial 0.25-µm AlGaN/GaN on SiC process

Besides the well known outstanding characteristics in terms of power density and thermal behavior, which are largely exploited for microwave high power applications, AlGaN/GaN HEMT technologies have demonstrated promising results for the design of low noise, high-dynamic-range and highly rugged ampl...

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Bibliographic Details
Published in2013 European Microwave Conference pp. 1467 - 1470
Main Authors Resca, Davide, Scappaviva, Francesco, Florian, Corrado, Rochette, Stephane, Muraro, Jean-Luc, di Giacomo Brunel, Valeria, Chang, Christophe, Baglieri, Didier
Format Conference Proceeding
LanguageEnglish
Published European Microwave Association 01.10.2013
Subjects
AlGaN/GaN HEMT
Gain
Gallium nitride
HEMTs
Logic gates
Low Noise Amplifier
MMIC amplifier
Noise
Noise measurement
robust amplifier
Robustness
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Summary:Besides the well known outstanding characteristics in terms of power density and thermal behavior, which are largely exploited for microwave high power applications, AlGaN/GaN HEMT technologies have demonstrated promising results for the design of low noise, high-dynamic-range and highly rugged amplifiers. In this paper we describe the design, implementation and characterization of a Ku-band MMIC Low Noise Amplifier for telecom Space applications, exploiting an industrial AlGaN/GaN 0.25 μm HEMT on SiC process. In the frequency band 12.8-14.8 GHz, the LNA features a linear gain over 20 dB with a Noise Figure below 1.85 dB. Input and output return losses are better than -9 dB in the same band. Power dissipation is 840 mW in linear operation. The LNA delivers about 25 dBm of output power at 1 dB compression point and it has been tested to survive without performance degradation 25 dBm of CW input power.
DOI:10.23919/EuMC.2013.6686945