Electron drift velocity modulation in mis transistor structure with one-dimensional electron gas

The effect of the gate voltage on the electron drift velocity in GaAs quantum nanowire transistor structure is studied. Electron transport is simulated by the Monte Carlo method in the electric quantum limit. The possibility of effective drift velocity modulation in the structure by the applied gate...

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Published in2013 23rd International Crimean Conference "Microwave & Telecommunication Technology" pp. 877 - 878
Main Authors Borzdov, A. V., Pozdnyakov, D. V., Borzdov, V. M.
Format Conference Proceeding
LanguageEnglish
Published CriMiCo'2013 Organising Committee, CrSTC 01.09.2013
Subjects
Aluminum oxide
Electron mobility
Gallium arsenide
Scattering
Transistors
Wires
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Abstract The effect of the gate voltage on the electron drift velocity in GaAs quantum nanowire transistor structure is studied. Electron transport is simulated by the Monte Carlo method in the electric quantum limit. The possibility of effective drift velocity modulation in the structure by the applied gate bias is shown.
AbstractList The effect of the gate voltage on the electron drift velocity in GaAs quantum nanowire transistor structure is studied. Electron transport is simulated by the Monte Carlo method in the electric quantum limit. The possibility of effective drift velocity modulation in the structure by the applied gate bias is shown.
Author Borzdov, V. M.
Borzdov, A. V.
Pozdnyakov, D. V.
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  givenname: V. M.
  surname: Borzdov
  fullname: Borzdov, V. M.
  organization: Belarusian State Univ., Minsk, Belarus
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Snippet The effect of the gate voltage on the electron drift velocity in GaAs quantum nanowire transistor structure is studied. Electron transport is simulated by the...
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StartPage 877
SubjectTerms Aluminum oxide
Electron mobility
Gallium arsenide
Scattering
Transistors
Wires
Title Electron drift velocity modulation in mis transistor structure with one-dimensional electron gas
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