Electron drift velocity modulation in mis transistor structure with one-dimensional electron gas
The effect of the gate voltage on the electron drift velocity in GaAs quantum nanowire transistor structure is studied. Electron transport is simulated by the Monte Carlo method in the electric quantum limit. The possibility of effective drift velocity modulation in the structure by the applied gate...
Saved in:
Published in | 2013 23rd International Crimean Conference "Microwave & Telecommunication Technology" pp. 877 - 878 |
---|---|
Main Authors | , , |
Format | Conference Proceeding |
Language | English |
Published |
CriMiCo'2013 Organising Committee, CrSTC
01.09.2013
|
Subjects | |
Online Access | Get full text |
Cover
Loading…
Summary: | The effect of the gate voltage on the electron drift velocity in GaAs quantum nanowire transistor structure is studied. Electron transport is simulated by the Monte Carlo method in the electric quantum limit. The possibility of effective drift velocity modulation in the structure by the applied gate bias is shown. |
---|---|
ISBN: | 9663353953 9789663353951 |