Effect of a stimulation layer on solid-phase crystallization of an amorphous Si film by pulse laser irradiation

Solid-phase crystallization of an amorphous Si film by pulse laser beam is investigated using a stimulation layer of yttria-stabilized zirconia (YSZ), compared with that on glass substrate. It is found that, at high pulse number, FWHM of c-Si peaks and crystalline fractions of Si films on YSZ layers...

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Published in2013 Twentieth International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD) pp. 175 - 176
Main Authors Mai Lien Thi Kieu, Mochizuki, Kazuhide, Horita, Susumu
Format Conference Proceeding
LanguageEnglish
Published JSAP 01.07.2013
Subjects
Annealing
Crystallization
Glass
Laser beams
Silicon
Substrates
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Summary:Solid-phase crystallization of an amorphous Si film by pulse laser beam is investigated using a stimulation layer of yttria-stabilized zirconia (YSZ), compared with that on glass substrate. It is found that, at high pulse number, FWHM of c-Si peaks and crystalline fractions of Si films on YSZ layers are smaller and higher, respectively, than those on glass substrates. Moreover, grain size of Si on YSZ layers is more uniform, compared with that on glass substrates. It is considered that the results are owed to crystallization stimulation effect of YSZ layer.