Flexible AMOLED display driven by amorphous InGaZnO TFTs
Threshold voltage shifts of amorphous In-Ga-Zn-Oxide (a-InGaZnO) TFTs on plastic substrates against bias-temperature stress were reduced below 0.03 V, equivalent to those on glass substrates. We have developed 10.2-inch WUXGA (1920×1200) flexible bottom-emission active-matrix organic light-emitting...
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Published in | 2013 Twentieth International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD) pp. 29 - 32 |
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Main Authors | , , , , , , , |
Format | Conference Proceeding |
Language | English |
Published |
JSAP
01.07.2013
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Subjects | |
Online Access | Get full text |
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Summary: | Threshold voltage shifts of amorphous In-Ga-Zn-Oxide (a-InGaZnO) TFTs on plastic substrates against bias-temperature stress were reduced below 0.03 V, equivalent to those on glass substrates. We have developed 10.2-inch WUXGA (1920×1200) flexible bottom-emission active-matrix organic light-emitting diode (AMOLED) driven by a-InGaZnO TFTs fabricated on a transparent polyimide film. We demonstrated a prototype flexible-display system integrated with a bend-input function that enables users to interact with the display by flexing it. |
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