Flexible AMOLED display driven by amorphous InGaZnO TFTs

Threshold voltage shifts of amorphous In-Ga-Zn-Oxide (a-InGaZnO) TFTs on plastic substrates against bias-temperature stress were reduced below 0.03 V, equivalent to those on glass substrates. We have developed 10.2-inch WUXGA (1920×1200) flexible bottom-emission active-matrix organic light-emitting...

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Bibliographic Details
Published in2013 Twentieth International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD) pp. 29 - 32
Main Authors Miura, Kentaro, Ueda, Tomomasa, Saito, Nobuyoshi, Nakano, Shintaro, Sakano, Tatsunori, Sugi, Keiji, Yamaguchi, Hajime, Amemiya, Isao
Format Conference Proceeding
LanguageEnglish
Published JSAP 01.07.2013
Subjects
Active matrix organic light emitting diodes
Plastics
Polyimides
Substrates
Thin film transistors
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Summary:Threshold voltage shifts of amorphous In-Ga-Zn-Oxide (a-InGaZnO) TFTs on plastic substrates against bias-temperature stress were reduced below 0.03 V, equivalent to those on glass substrates. We have developed 10.2-inch WUXGA (1920×1200) flexible bottom-emission active-matrix organic light-emitting diode (AMOLED) driven by a-InGaZnO TFTs fabricated on a transparent polyimide film. We demonstrated a prototype flexible-display system integrated with a bend-input function that enables users to interact with the display by flexing it.