Radiation response of single and dual junction p/sup +/n InGaP/GaAs space solar cells

The radiation response of single and dual-junction p/sup +/n InGaP/GaAs solar cells is studied. The degradation mechanisms of single-junction InGaP cells are identified, and characteristic degradation curves in terms of displacement damage dose are calculated. The response of dual-junction cells is...

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Bibliographic Details
Published inConference Record of the Twenty Sixth IEEE Photovoltaic Specialists Conference - 1997 pp. 843 - 846
Main Authors Walters, R.J., Xapsos, M.A., Summers, G.P., Cotal, H.L., Messenger, S.R.
Format Conference Proceeding
LanguageEnglish
Published IEEE 1997
Subjects
Degradation
Electrons
Filtering
Gallium arsenide
Indium phosphide
NASA
NIST
Photovoltaic cells
Protons
Sun
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Summary:The radiation response of single and dual-junction p/sup +/n InGaP/GaAs solar cells is studied. The degradation mechanisms of single-junction InGaP cells are identified, and characteristic degradation curves in terms of displacement damage dose are calculated. The response of dual-junction cells is presented, and the response of each sub-cell is discussed. The cell response is compared with those of other technologies. The effect of current injection on irradiated InGaP cell is presented.
ISBN:9780780337671
0780337670
ISSN:0160-8371
DOI:10.1109/PVSC.1997.654219