Exploring the field-effect control of breakdown paths in lateral W/HfO2/W structures

Metal nanogap test structures are used to demonstrate the field-effect control of the conduction through dielectric breakdown paths in W/HfO 2 /W structures. Variations of the size of the conducting filament in the nanogap are demonstrated by current compliance limited voltage ramps and by a partial...

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Published in2013 14th International Conference on Ultimate Integration on Silicon (ULIS) pp. 177 - 180
Main Authors Saura, X., Lian, X., Jimenez, D., Miranda, E., Borrise, X., Rafi, J. M., Campabadal, F., Sune, J.
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.03.2013
Subjects
Atmospheric measurements
Particle measurements
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Summary:Metal nanogap test structures are used to demonstrate the field-effect control of the conduction through dielectric breakdown paths in W/HfO 2 /W structures. Variations of the size of the conducting filament in the nanogap are demonstrated by current compliance limited voltage ramps and by a partial reset method.
ISBN:9781467348003
1467348007
DOI:10.1109/ULIS.2013.6523513