The temperature dependence of time-averaged hole drift mobility in As/sub 2/S/sub 3/ derived from PA measurements

The time-averaged hole drift mobility in As/sub 2/S/sub 3/ glass was studied in the range 77-330 K on the basis of temperature dependence of steady-state photoinduced absorption. The hole mobility was found to be thermally activated at high temperatures, of the order of 10/sup -10/ cm/sup 2//V sec a...

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Published in1997 International Semiconductor Conference 20th Edition. CAS '97 Proceedings Vol. 1; pp. 45 - 48 vol.1
Main Authors Andriesh, A.M., Culeac, I.P., Ewen, P.J.S., Owen, A.E.
Format Conference Proceeding
LanguageEnglish
Published IEEE 1997
Subjects
Absorption
Charge carrier processes
Electron traps
Glass
Kinetic energy
Photonic band gap
Probes
Spontaneous emission
Steady-state
Temperature dependence
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Summary:The time-averaged hole drift mobility in As/sub 2/S/sub 3/ glass was studied in the range 77-330 K on the basis of temperature dependence of steady-state photoinduced absorption. The hole mobility was found to be thermally activated at high temperatures, of the order of 10/sup -10/ cm/sup 2//V sec at 300 K and almost temperature independent below /spl sim/130 K.
ISBN:9780780338043
0780338049
DOI:10.1109/SMICND.1997.651545