Design and analysis of a novel mixed accumulation/inversion mode FD SOI MOSFET

In this paper, a new fully-depleted SOI MOSFET device is designed and analyzed, which combines the advantages of both the inversion mode and the accumulation mode devices: its performance is better than the inversion mode device, and its breakdown voltage higher than the accumulation mode device. Ad...

Full description

Saved in:
Bibliographic Details
Published in1997 IEEE International SOI Conference Proceedings pp. 100 - 101
Main Authors Daun, F.L., Ioannou, D.E.
Format Conference Proceeding
LanguageEnglish
Published IEEE 1997
Subjects
Application software
Doping
Electric breakdown
Hot carriers
MOSFET circuits
Power engineering and energy
Power engineering computing
Silicon
Threshold voltage
Transconductance
Online AccessGet full text

Cover

More Information
Summary:In this paper, a new fully-depleted SOI MOSFET device is designed and analyzed, which combines the advantages of both the inversion mode and the accumulation mode devices: its performance is better than the inversion mode device, and its breakdown voltage higher than the accumulation mode device. Additionally, the new device results in better hot carrier reliability.
ISBN:9780780339385
078033938X
ISSN:1078-621X
2577-2295
DOI:10.1109/SOI.1997.634952