Characterization of interface traps in SOI material

In SOI material, the presence of interface traps at the buried oxide layer interfaces has been demonstrated from electrical data. More recently, interface defects were identified at the buried oxide interfaces in SOI material. In this study we use heat treatment under high-vacuum (instead of an iner...

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Published in1997 IEEE International SOI Conference Proceedings pp. 64 - 65
Main Authors Vanheusden, K., Warren, W.L., Shedd, W.M., Pugh, R.D., Fleetwood, D.M., Schwank, J.R., Devine, R.A.B.
Format Conference Proceeding
LanguageEnglish
Published IEEE 1997
Subjects
Annealing
Electron traps
Hydrogen
Laboratories
Paramagnetic materials
Paramagnetic resonance
Space missions
Temperature
Threshold voltage
Wafer bonding
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Summary:In SOI material, the presence of interface traps at the buried oxide layer interfaces has been demonstrated from electrical data. More recently, interface defects were identified at the buried oxide interfaces in SOI material. In this study we use heat treatment under high-vacuum (instead of an inert ambient such as Ar) as a tool to enhance the buried interface trap density in the SOI material. The results provide new insights into the microscopic, chemical, and electrical signature of these interface traps in SOI.
ISBN:9780780339385
078033938X
ISSN:1078-621X
2577-2295
DOI:10.1109/SOI.1997.634934