GaAs FET with a sub-surface delta-doped channel

GaAs FET with a single sub-surface delta-doped channel is realized. The source and the drain have a tunnel ohmic contact to the channel with rather low contact resistance <;10 -4 ohm cm 2 . A gate leakage current does not exceed 1 μA in the bias range -1.5...+0.5 V. Due to the extremely thin acti...

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Published in2012 22nd International Crimean Conference "Microwave & Telecommunication Technology" pp. 733 - 734
Main Authors Shashkin, V. I., Danil'tsev, V. M., Demidov, E. V., Murel, A. V., Shuleshova, I. Yu
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.09.2012
Subjects
FETs
Gallium arsenide
Logic gates
Microstructure
MOCVD
Silicon
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Summary:GaAs FET with a single sub-surface delta-doped channel is realized. The source and the drain have a tunnel ohmic contact to the channel with rather low contact resistance <;10 -4 ohm cm 2 . A gate leakage current does not exceed 1 μA in the bias range -1.5...+0.5 V. Due to the extremely thin active region of FET, their current is very sensitive to condition of GaAs surface.
ISBN:9781467311991
1467311995