A 11 µW 0°C-160°C temperature sensor in 90 nm CMOS for adaptive thermal monitoring of VLSI circuits

This paper reports design, efficiency and measurement results of the temperature sensor based on substrate bipolar transistors and a PTAT multiplier for adaptive thermal monitoring of deep-submicron VLSI circuits. The prototype temperature sensor with un-calibrated 3σ accuracy of 0.9°C within a 0°C-...

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Bibliographic Details
Published in2012 IEEE International Symposium on Circuits and Systems (ISCAS) pp. 2007 - 2010
Main Authors Zjajo, A., van der Meijs, N., van Leuken, R.
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.05.2012
Subjects
CMOS integrated circuits
Monitoring
Resistors
Temperature sensors
Transistors
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Summary:This paper reports design, efficiency and measurement results of the temperature sensor based on substrate bipolar transistors and a PTAT multiplier for adaptive thermal monitoring of deep-submicron VLSI circuits. The prototype temperature sensor with un-calibrated 3σ accuracy of 0.9°C within a 0°C-160°C temperature range has been fabricated in standard single poly, six metal 90nm CMOS, consumes only 11μW at 1V power supply and measures 0.05mm 2 .
ISBN:9781467302180
146730218X
ISSN:0271-4302
2158-1525
DOI:10.1109/ISCAS.2012.6271672