A 11 µW 0°C-160°C temperature sensor in 90 nm CMOS for adaptive thermal monitoring of VLSI circuits
This paper reports design, efficiency and measurement results of the temperature sensor based on substrate bipolar transistors and a PTAT multiplier for adaptive thermal monitoring of deep-submicron VLSI circuits. The prototype temperature sensor with un-calibrated 3σ accuracy of 0.9°C within a 0°C-...
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Published in | 2012 IEEE International Symposium on Circuits and Systems (ISCAS) pp. 2007 - 2010 |
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Main Authors | , , |
Format | Conference Proceeding |
Language | English |
Published |
IEEE
01.05.2012
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Subjects | |
Online Access | Get full text |
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Summary: | This paper reports design, efficiency and measurement results of the temperature sensor based on substrate bipolar transistors and a PTAT multiplier for adaptive thermal monitoring of deep-submicron VLSI circuits. The prototype temperature sensor with un-calibrated 3σ accuracy of 0.9°C within a 0°C-160°C temperature range has been fabricated in standard single poly, six metal 90nm CMOS, consumes only 11μW at 1V power supply and measures 0.05mm 2 . |
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ISBN: | 9781467302180 146730218X |
ISSN: | 0271-4302 2158-1525 |
DOI: | 10.1109/ISCAS.2012.6271672 |